General Competition (April 1992)

Advancement of Monocrystalline Silicon Carbide Growth Processes

Sponsor: Cree Inc. (formerly Cree Research Inc.

• Project Performance Period: 6/15/1992 - 6/14/1994
• Total project (est.): $2,391,587.00
• Requested ATP funds: $1,956,853.00

Because of a unique blend of physical and electronic properties, silicon carbide (SiC) potentially is a superior semiconductor for making short-wavelength optoelectronic devices or electronic devices to withstand high temperatures, radiation or high power levels. Blue light-emitting diodes (LEDs) are a particularly important application because blue is the missing primary color in the LED palette; necessary for full-color LED displays. At present, the only commercially viable blue LEDs are made with SiC. Blue and ultraviolet laser diodes, ultraviolet photodetectors, high-power microwave transistors, temperature-resistant integrated circuits for automobile and airplane engines, and a variety of military devices are other promising applications. Most of the technology building-blocks for SiC integrated circuits are in place: epitaxial layers, ion implantation of source and drain wells, controlled oxide growth, and an etching process, for example. At present the SiC device market is limited by difficulties in growing large, high-quality single crystals of SiC to make the crystal wafers used in commercial semiconductor lines. Cree, the world leader in SiC technology, now produces high-quality SiC crystal boules in one-inch diameters. They propose to advance this technology to greatly reduce the defect density and increase the boule size (to two inches or greater) and also to significantly improve the current epitaxial deposition and doping process for SiC, removing technical barriers to more widespread commercialization.

For project information:

Calvin Carter, (919) 361-5709

ATP Project Manager

Eric Samuelson, (301) 975-6393
eric.samuelson@nist.gov