General Competition (March 1991)

Nonvolatile Magnetoresistive Semiconductor Technology

Sponsor: N V E (formerly Novolatile Electronics, Inc.)

• Project Performance Period: 4/1/1991 - 3/31/1994
• Total project (est.): $2,607,900.00
• Requested ATP funds: $1,738,600.00

An important limitation of main computer memory is that it is "volatile" -- the data disappear as soon as the power is shut off. Some specialized semiconductor memories -- so-called "EEPROMS" -- are limited in the number of read/write cycles they can handle before wearing out, and more permanent storage devices such as disk or tape drives are slow and have complex, mechanical parts subject to wear. The design of the entire range of modern computers from microcomputers in automobile control systems to supercomputers would be affected by the development of a fast, dense, nonvolatile memory capable of unlimited read/write cycles. NVE proposes to develop that technology, based on a unique magnetoresistive memory (MRAM) patented by Honeywell, Inc. and planned for use in space and avionics applications. Honeywell currently has demonstrated special 16 kilobit MRAMs NVE has an exclusive license to develop non-space/avionics applications of MRAM technology. NVE proposes to improve significantly the device speeds, density, and production yields in order to compete with conventional DRAMs (dynamic random-access memory) in a broad range of commercial applications.

For project information:

James M. Daughton, (612) 550-0913

ATP Project Manager

Purabi Mazumdar, (301) 975-4891
purabi.mazumdar@nist.gov