Open Competition 1 - Electronics and Photonics

Achromatic Fresnel Optic for EIV and X-ray Radiation: An Innovative Camera Concept for Next Generation Lithography

Sponsor: Xradia, Inc.

• Project Performance Period: 11/1/2002 - 6/30/2005
• Total project (est.): $2,665,454.00
• Requested ATP funds: $2,000,000.00

Continuing improvements in integrated circuit (chip) performance depend heavily on advances in lithography, the technique manufacturers use to image and print ever-smaller and more densely packed components, thereby increasing speed and functionality. As feature sizes shrink to less than the wavelengths of light used by current-generation lithography and inspection tools, radical innovations will be needed to make and measure features smaller than 70 nanometers (nm) in size. Xradia plans a two-year project to develop and demonstrate a prototype camera capable of high-resolution imaging over a large field of view for extreme ultraviolet (EUV) and X-ray lithographic applications (using wavelengths 20-200 times shorter than the radiation used today). The proposed Achromatic Fresnel Optic (AFO) camera will combine two types of lenses with different dispersion properties, one offering efficient, high-resolution focusing and the other recombining dispersed radiation of different wavelengths to correct for color quality and overcome limitations on large-area imaging. If challenges in optics fabrication and alignment can be met, this concept could be used to print sub-30-nm features and offer a simpler, faster, and cheaper alternative to competing EUV optics, which rely on complex mirrors and multilayer coatings. The AFO would offer extremely high resolution, a large field of view, and high spectral bandwidth, and it would be inexpensive to fabricate and maintain, thus allowing rapid reductions in feature size without increasing manufacturers' costs. Although the project is potentially highly rewarding, the technology is difficult and the risks are too high for priviate investors. ATP support will enable the AFO to be developed in time for chip fabricators' move to dimensions below 100 nm. If successfully developed and commercialized, the AFO could be used in next-generation lithography and inspection tools, saving chip manufacturers an estimated $500 million by 2006 through reduced costs and enhanced competitiveness. In addition, the United States could gain a significant share of the $9 billion market for lithography tools and maintain its status as the world's dominant chip supplier. The AFO's nanoscale imaging capabilities also could enable mass fabrication of novel nanoscale structures with diverse potential applications.

For project information:

Wenbing Yun, (925) 288-1818
wyun@xradia.com

ATP Project Manager

Thomas Lettieri, (301) 975-3496
thomas.lettieri@nist.gov